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Use of graphene in a transistor configuration offers an alternative to metal electrodes for the recording of ultraslow neural potentials that occur in neurologic diseases.
A second-order topological insulator in an acoustical metamaterial with a breathing kagome lattice, supporting one-dimensional edge states and zero-dimensional corner states is demonstrated.
Higher-order topological acoustic metamaterials on kagome lattices, which host topologically protected corner states, can confine sound at corners. This may lead to applications of acoustic metamaterials in local acoustic field enhancement, trapping and manipulating of particles, and acoustic sensing and probing.
Arrays of graphene microtransistors are used to record infraslow cortical brain activity. The reduced signal drift and the array compatibility with optical imaging techniques make these devices useful for monitoring of brain physiology.
The physics of a second-order topological insulator, such as two-dimensional polarization, one-dimensional edge states and zero-dimensional corner states, are demonstrated experimentally in an acoustic breathing kagome lattice.
The phenomenology of multiferroic quantum criticality, where both ferroelectric and magnetic order parameters are tuned by quantum fluctuations, is drawn out. Non-thermal tuning parameters such as alloying and strain are explored and material realizations proposed.
Thermal management can improve device function, but the role of dislocations is poorly understood. Here, thermoreflectance measurements show orientated dislocations in InN cause a thermal anisotropy ratio of 10, which is not predicted by standard models.
Electric control of Li+ ion migration within MoS2 multilayer films allows the realization of memristive devices that can be connected in-plane to show synaptic competition and cooperation behaviours.
An optimized design for a broad-area surface-emitting photonic-crystal laser leads to high brightness of over 300 MW cm–2 sr–1 and an output power of 10 W under pulsed excitation.
Hydrogen from surface-based electrolysis is implicated in the operation of high-speed magneto-ionic devices. Functionalizing this discovery, a new family of potentially high-speed, high-efficiency ionic devices is born.
Electrolyte gating of complex oxides enables substantial control of electronic phase transitions, allowing electrical control of complex phenomena. Here, the role of both electrostatic and electrochemical mechanisms in this process is elucidated.
A crystal structure with one-dimensional order is identified in oxide ceramics, which is distinguished from the well-known categories of solid structures and potentially provides unexpected properties.
Structural transitions departing from the known phases of MoTe2 are induced by applying a vertical electric field to multilayers of this material. These distorted structures show distinct conducting states that can be used for resistive memories.
An ordered structure that has only translational periodicity in one direction— unlike the known solid categories of crystal, quasicrystal and amorphous— is discovered in MgO and Nd2O3 ceramics.
