A crystalline material features a shear band that is amorphous.

September issue out

Read about how amorphous shear bands drive plasticity, surface electrochemistry in hafnia, hole-limited electrochemical doping in mixed ionic–electronic conductors, and hybrid dielectrics.


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  • Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states enhances hole mobility in C8-DNTT-C8 compared to DNTT.

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    • Using the van der Waals crystal Sb2O3 as a buffer layer enables the growth of high-κ dielectrics on two-dimensional materials via atomic layer deposition.

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    • In a non-collinear antiferromagnet, elementary spins rotate with opposite handedness with respect to the collective octupole magnetic moment when stirred by spin currents.

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