Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(SIMIT)
Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), was founded in 1928, SIMIT is a multidisciplinary comprehensive institute engaged in both fundamental and applied research.
In the 90-year development history, SIMIT has always readjusted the layout of scientific research to meet the national strategic demands, and played a leading role in the national economic construction. In the 1960s, SIMIT started the development of micro-electronics and semiconductor manufacturing technology, and developed China’s first piece of industrial practical PN junction isolation IC, high-speed ECL circuit and the first domestic 8-bit, 16-bit microprocessor. In the mid 1980’s, SIMIT conducted research on micro-electro-mechanical systems (MEMS) and Silicon on insulator (SOI) materials, occupying a domestic leading position and an important place in the world. In the 21st century, SIMIT had independent intellectual property of broadband wireless communication system; SIMIT realized the industrialization of SOI materials and filled the domestic blank. The independently developed Superconducting Nanowire Single-Photon Detector (SNSPD) technology achieved NbN SNSPD detection efficiency of over 90% for the first time globally, making it the most efficient in the world. The SNSPD was successfully applied in the quantum communication domain. In collaboration with the University of Science and Technology of China, the research achievement was included in China Ten Major Scientific and Technological Progress in 2014.During the “Thirteenth Five-Year Plan” period, SIMIT has deployed three significant breakthroughs, including intelligent sensing microsystem, superconducting quantum devices & circuits and high-end Si-based materials and devices.
Currently, SIMIT has 9 research divisions, including 2 state key laboratories, 2 CAS key laboratories. SIMIT established Center for Excellence in Superconducting Electronics in October, 2015. Research directions include：Intelligent sensing micro-system，Superconducting quantum devices and circuits，High-end silicon-based materials and devices，Broadband wireless communication technology and equipment，Micro-Nano sensing technology and devices，Phase change memory and its application，Terahertz solid-state technology，Brain-like chips and bionic vision.
Award & Prize
Since the founding of the People’s Republic of China, SIMIT has won 49 national scientific and technological awards and 355 ministerial/provincial scientific and technological awards. Among others, SIMIT received a grand prize of national scientific and technological progress awards for its “grade-A separation membrane” technology, and received first prizes of national scientific and technological progress awards for its “high-speed, ultrahigh-speed bipolar digital integrated circuit” and “research, development and industrialization of high-end Si-based SOI materials”.
SIMIT has built up a high-qualified R&D team. Now, we have 2 CAS academicians and 1 NAS academician of USA. There are totally 77 high-level talents.
Shanghai Institute of Microsystem and Information Technology (SIMIT)
7F, Building 5,No.865 Changning Rd, Shanghai, 200050, China