Volume 5 Issue 7, July 2022

Carbon nanotube field-effect transistors that are fabricated using aligned nanotube arrays exhibit an identical sequence of random ternary bits, which can be separated and used to generate security keys for encrypted communications.

Three-dimensional computing systems made of vertically integrated complementary metal–oxide–semiconductor circuits and layered resistive memory can perform analogue computing-in-memory with high energy efficiency.

This Perspective examines the challenges involved in assessing the operation and performance of field-effect transistors based on emerging materials, and provides guidelines for the consistent reporting and benchmarking of the devices.

A pair of rows of field-effect transistors fabricated perpendicular to the growth direction on an aligned carbon nanotube array can create twinned physically unclonable functions for use in secure communication.

Nanoscale physical unclonable function labels that offer multiple, independently operating keys and can be used for high-speed multipurpose identification can be created by exploiting the non-deterministic molecular self-assembly of block copolymers.

Colloidal quantum dot photodetectors can be integrated with complementary metal–oxide–semiconductor readout integrated circuits, resulting in low-cost, high-resolution infrared imagers.

In an approach inspired by the functional and anatomical structure of fiddler crab eyes, an amphibious and panoramic artificial vision system can be created by integrating a microlens arrays with a flexible comb-shaped silicon photodiode array on a spherical structure.

Sparsification techniques can be used to create Ising machines prototyped on field-programmable gate arrays that can quickly and efficiently solve combinatorial optimization problems.

Three-dimensional computing-in-memory circuits based on vertical resistive random-access memory and complementary metal–oxide–semiconductor technologies can be used to create efficient hardware for artificial neural networks.