Volume 4 Issue 6, June 2021

Magnetic tunnel junctions with a hybrid free layer design can be used to electrically read and write domain walls.

Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.

This Review examines the development of metasurfaces for bioelectronic interfaces, exploring how they can be used to control electromagnetic fields in the vicinity of the human body and their potential application in current and emerging healthcare technologies.

Domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design can offer electrical read and write, and fast domain wall motion driven via spin–orbit torque.

By using two-dimensional materials with different polarities, single neuristors can act as XNOR, NOR, OR and AND logic gates.

Transistors based on arrays of aligned carbon nanotubes can exhibit cutoff frequencies of up to 540 GHz, and could be further scaled for operation at millimetre-wave and terahertz frequencies.

Boron arsenide and boron phosphide cooling substrates can be integrated with other materials, including the wide-bandgap semiconductor gallium nitride, creating structures that exhibit high thermal boundary conductances and high-electron-mobility transistors that exhibit low hot-spot temperatures.

Electrically tunable metamaterial-inspired devices in the microwave range can be created by using resonators that are integrated with organic electrochemical transistors and are entirely fabricated via inkjet-printed onto polyimide substrates.

A tactile sensing system that can learn to identify different types of surface can be created using sensors that mimic the fast and slow responses of mechanoreceptors found in human skin.

A microstrip patch antenna array and a single high-electron-mobility transistor, which are created with inkjet printing, can be used for backscatter communication at millimetre-wave frequencies, providing a bit rate of two gigabits per second and with a front-end energy consumption of only 0.17 pJ per bit.