Volume 4 Issue 12, December 2021

Han Wang and H.-S. Philip Wong of the Taiwan Semiconductor Manufacturing Company (TSMC) tell Nature Electronics about the company’s research efforts into two-dimensional materials.

Printed thin-film transistors and circuits fabricated on plastic strips can be wrapped around fibres to create stretchable electronics.

A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.

Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.

Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.

An on-chip device that is based on a Josephson junction coupled to a fabricated superconducting resonator can provide a source of coherent microwave radiation for potential use in scaled quantum circuits.

Measurements of inkjet-printed thin-film devices made from titanium carbide MXene (metal), molybdenum disulfide (semiconductor) and few-layer graphene (semimetal) clarify the charge transport mechanisms of the devices and highlight the role of inter-flake and intra-flake processes.

Inorganic molecular crystal films of antimony trioxide can be fabricated using thermal evaporation deposition and used as a van der Waals dielectric in molybdenum disulfide field-effect transistors.

A vertical transistor and resistive memory can be integrated on a single vertical III–V semiconductor nanowire on silicon, creating a compact cell capable of Boolean logic operations.

Advanced complementary metal–oxide–semiconductor technology and resistive random-access memory can be used to create high-bit-precision compute-in-memory macros for low latency and efficient edge computing.