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Volume 4 Issue 10, October 2021

Volume 4 Issue 10

Doping graphene with oxidized monolayers

Graphene can be doped to high carrier densities via charge transfer from a neighbouring monolayer of tungsten oxyselenide, which is created by oxidizing a layer of tungsten diselenide. Theoptical microscopy image on the cover shows two silicon nitride microring resonators, with the top resonator incorporating the doped graphene as a transparent electrode.

See Choi et al.

Image: Ipshita Datta, Columbia University. Cover Design: Allen Beattie.

Editorial

  • Editorial |

    Ion implantation can be used to dope silicon devices, but can be problematic when applied to the atomically thin crystal structure of two-dimensional materials — an increasing range of alternative methods is though available.

Research Highlights

News & Views

  • News & Views |

    Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

    • Ruixiang Fei
    • Li Yang
  • News & Views |

    Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.

    • George A. Kyriacou

Reviews

  • Review Article |

    This Review examines the development of novel physical effects and materials for wireless power transfer, considering techniques based on coherent perfect absorption, parity–time symmetry and exceptional points, and on-site power generation, as well as the use of metamaterials and metasurfaces, and acoustic power transfer.

    • Mingzhao Song
    • Prasad Jayathurathnage
    • Alex Krasnok

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