Volume 3 Issue 10, October 2020

Volume 3 Issue 10

Artificial neural networks in 2D

Multilayers of the two-dimensional material hexagonal boron nitride (h-BN) can be employed as the resistive switching material in high-density memristive crossbar arrays, creating devices that can be used to model an artificial neural network for image recognition. The cover shows an optical microscopy image of a 10 × 10 memristor crossbar array, which has a vertical metal/h-BN/metal structure.

See Chen et al.

Image: Mario Lanza, Soochow University. Cover Design: Tulsi Voralia.

Editorial

  • Editorial |

    Ferroelectric field-effect transistors could play a key role in the development of data-centric computing hardware.

Research Highlights

News & Views

  • News & Views |

    With the help of a gate electrode to control the charge state of individual molecules on graphene, information can be moved along a one-dimensional molecular chain, mimicking the behaviour of an electronic shift register.

    • Roberto Otero
  • News & Views |

    Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.

    • Yangyang Wang
    •  & Lin Xiao

Reviews

  • Perspective |

    This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.

    • Asif Islam Khan
    • , Ali Keshavarzi
    •  & Suman Datta

Research

  • Article |

    One-dimensional molecular arrays on graphene field-effect transistors can be reversibly switched between different periodic charge states by tuning the graphene Fermi level via a back-gate electrode and by manipulating individual molecules, allowing them to function as a nanoscale shift register.

    • Hsin-Zon Tsai
    • , Johannes Lischner
    • , Arash A. Omrani
    • , Franklin Liou
    • , Andrew S. Aikawa
    • , Christoph Karrasch
    • , Sebastian Wickenburg
    • , Alexander Riss
    • , Kyler C. Natividad
    • , Jin Chen
    • , Won-Woo Choi
    • , Kenji Watanabe
    • , Takashi Taniguchi
    • , Chenliang Su
    • , Steven G. Louie
    • , Alex Zettl
    • , Jiong Lu
    •  & Michael F. Crommie
  • Article |

    Monolayer graphene can be magnetized by coupling to an antiferromagnetic thin film of chromium selenide, resulting in an exchange splitting energy as high as 134 meV at 2 K.

    • Yingying Wu
    • , Gen Yin
    • , Lei Pan
    • , Alexander J. Grutter
    • , Quanjun Pan
    • , Albert Lee
    • , Dustin A. Gilbert
    • , Julie A. Borchers
    • , William Ratcliff II
    • , Ang Li
    • , Xiao-dong Han
    •  & Kang L. Wang
  • Article |

    A two-terminal device that uses an array of carbon nanotubes as the source contact can excite electroluminescence from a variety of materials, producing electroluminescence from long-wave infrared to ultraviolet wavelengths, with onset voltages approaching the optical energy gap of the emitting material.

    • Yingbo Zhao
    • , Vivian Wang
    • , Der-Hsien Lien
    •  & Ali Javey
  • Article |

    The superionic phase transition in silver iodide can be used to tailor the carrier type in two-dimensional tungsten diselenide and create programmable transistors, diodes and logic gates, the functions of which can be erased by external triggers such as ultraviolet irradiation.

    • Sung-Joon Lee
    • , Zhaoyang Lin
    • , Jin Huang
    • , Christopher S. Choi
    • , Peng Chen
    • , Yuan Liu
    • , Jian Guo
    • , Chuancheng Jia
    • , Yiliu Wang
    • , Laiyuan Wang
    • , Qingliang Liao
    • , Imran Shakir
    • , Xidong Duan
    • , Bruce Dunn
    • , Yue Zhang
    • , Yu Huang
    •  & Xiangfeng Duan

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