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Transistors that are printed on paper substrates using all-carbon inks can be completely recycled, providing a potential route to helping solve the problem of electronic waste.
This Review examines the development of radiation-hardened electronics, considering the design methodologies available with conventional complementary metal–oxide–semiconductor (CMOS) technologies and the potential use and applications of emerging memory technologies.
Woven displays with a high number of light-emitting pixels can be created by interlacing two electrically conducting fibres and forming electroluminescent units at the crossover points.
This Perspective assesses the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal–oxide–semiconductor (CMOS) devices based on two-dimensional materials, concluding that due to excessive leakage currents, the material is unlikely to be suitable for use in ultrascaled CMOS devices.
The electrical and mechanical robustness of thin metal film electrodes can be improved by adding an atomically thin interlayer, such as graphene, between the metal and the flexible substrate.
Wearable electronic devices, which allow physiological signals to be continuously monitored, can be used in the early detection of asymptomatic and pre-symptomatic cases of COVID-19.
A flexible biosensing system with in-sensor machine-learning functionality can recognize up to 21 hand gestures in real time based on surface electromyography patterns from a forearm.
This Review examines the three established approaches for creating stretchable transistors—buckling engineering, stiffness engineering and intrinsic-stretchability engineering—and explores the current and future capabilities of stretchable transistors and circuits in human-integrated electronics.
Isolated point defects in silicon that emit light at telecom wavelengths could help accelerate the development of quantum information technologies using commercial platforms.
This Perspective examines the concept of near-senor and in-sensor computing in which computation tasks are moved partly to the sensory terminals, exploring the challenges facing the field and providing possible solutions for the hardware implementation of integrated sensing and processing units using advanced manufacturing technologies.
A cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.
This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.
Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.
With the help of a gate electrode to control the charge state of individual molecules on graphene, information can be moved along a one-dimensional molecular chain, mimicking the behaviour of an electronic shift register.