Research articles

A haptic interface that uses thermal, mechanical and electrotactile modes of stimulation to target different receptors in the skin can provide users with diverse haptic sensations, reproducing the tactile information of fine roughness, macro roughness, slipperiness, force and temperature.

Rhombohedral-stacked molybdenum disulfide with sliding ferroelectric behaviour can be used to create atomically thin ferroelectric transistors for computing-in-memory device applications.

Memristors based on electric-field-induced phase transitions between a semiconducting and conductive phase of molybdenum ditelluride can be improved by using stressed metal contacts to strain the material closer to the phase switching point.

An ultrasound patch that is based on multiple phased arrays of rare-earth-doped ceramic piezoelectric transducers on a stretchable substrate can be conformably attached to the surface of the body for a large field of view and operator-independent imaging of deep organs.

An in-memory computing chip for vector–matrix multiplication and discrete signal processing applications can be fabricated using floating-gate field-effect transistors based on monolayer molybdenum disulfide.

A spiking neural network that is based on event-driven vision sensors can be created using two parallel photodiodes of opposite polarities that output programmable spike signal trains in response to changes in light intensity.

Ising- and Potts-model-based simulated annealing can be performed with photon-detector-based neuron circuits and used to solve a range of optimization problems.

An effective-gate-voltage-programmed graded-doping method can be used to reconfigure a single-gate molybdenum ditelluride device to different states, including a polarity-switchable diode, memory, Boolean logic and artificial synapse.

A model that predicts the force behaviour for solid/liquid-dielectric multilayer stacks independent of actuator design, and solely based on the material properties, can be used to develop actuators that provide a steady force output under constant-voltage operation.

Five-stage ring oscillators that operate at frequencies of up to 2.65 GHz can be created using monolayer molybdenum disulfide field-effect transistors developed with a design-technology co-optimization process.

A ternary metallic alloy VS_2xSe_2(1–x) that has a tunable work function can be grown using chemical vapour deposition and used as contacts for two-dimensional semiconductors.

Switching-current-based low-power transmitters with a high throughput can be created using an approach in which silicon-photonics-based Mach–Zehnder modulators and complementary metal–oxide–semiconductor electrical drivers are co-designed.

Industry compatible solid-state doping of regions between the channel and contacts in carbon nanotube transistors can be used to control device polarity and improve device performance.

Dual-gated van der Waals heterojunction transistors can provide Gaussian, sigmoid and mixed-kernel functions for use in low-power machine learning classification operations.

Out-of-plane polarized spin current generated by the Weyl semimetal tantalum iridium telluride can be used to achieve the field-free switching of the perpendicular magnetic anisotropy ferromagnet cobalt iron boron at room temperature.

A reconfigurable field-effect transistor based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride heterostructure can offer nonvolatile control of its channel conductivity via photoinduced trapping of electrons or holes at the bottom dielectric interface.

A low-power radio-frequency multiplexing cryo-electronics system, which is based on complementary metal–oxide–semiconductor technology, can operate below 15 mK and provide the control and interfacing of superconducting qubits with minimal cross-coupling.

A machine-learning-based model can be used to perform atomistic simulations of phase changes along the germanium–antimony–tellurium composition line, up to a full-size memory device model that contains half a million atoms.