Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
Commercial touchscreens can serve as a reader interface for capacitive coupled data transfer using identification tags that are fabricated with thin-film transistor technology and powered by thin-film photovoltaic cells that convert light from the touchscreens.
Gate dielectrics with an equivalent oxide thickness of only one nanometre can be grown on two-dimensional semiconductors with the help of a monolayer molecular crystal.
Thin-film transistors with a high electron mobility and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide.
A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor α-In2Se3 as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.
A floating-gate memristive device fabricated in a commercial 180 nm CMOS process can be integrated into a selector-free memristive array and used to demonstrate basic neuromorphic applications.
Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.
With the help of extreme-ultraviolet lithography and high-mobility-channel fin field-effect transistors, the Taiwan Semiconductor Manufacturing Company deliver their latest CMOS platform for use in mobile and high-performance computing applications.
A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
Silicon circuits with increased functionality and device density can be created by directly integrating amorphous oxide semiconductor devices on top of them.
This Perspective explores the potential of carbon nanotube electronics, examining the development of nanotube-based field-effect transistors and integrated circuits, and the challenges that exist in delivering large-scale systems.
Quantum computing requires time and sustained investment to deliver practical applications — a lesson the development of carbon nanotube electronics illustrates.