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This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.
This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.
This Review examines the development of novel physical effects and materials for wireless power transfer, considering techniques based on coherent perfect absorption, parity–time symmetry and exceptional points, and on-site power generation, as well as the use of metamaterials and metasurfaces, and acoustic power transfer.
This Review examines the development of emerging semiconductor materials—organic semiconductors, colloidal quantum dots and metal halide perovskites—for light-emitting diodes, considering efforts to improve modulation performance and device efficiency, as well as potential applications in on-chip interconnects and light fidelity (Li-Fi).
This Review examines the use of colloidal quantum dots in the development of next-generation electronics, including luminescent, optoelectronic, memory and thermoelectric devices.
This Review examines wireless on-demand drug delivery systems that are triggered by electric fields, magnetic fields or electromagnetic radiation, and provides design guidelines for the development of such systems.
This Review examines the development of metasurfaces for bioelectronic interfaces, exploring how they can be used to control electromagnetic fields in the vicinity of the human body and their potential application in current and emerging healthcare technologies.
This Review examines the development of radiation-hardened electronics, considering the design methodologies available with conventional complementary metal–oxide–semiconductor (CMOS) technologies and the potential use and applications of emerging memory technologies.
This Review examines the three established approaches for creating stretchable transistors—buckling engineering, stiffness engineering and intrinsic-stretchability engineering—and explores the current and future capabilities of stretchable transistors and circuits in human-integrated electronics.
