News & Views in 2019

Gate dielectrics with an equivalent oxide thickness of only one nanometre can be grown on two-dimensional semiconductors with the help of a monolayer molecular crystal.

Purely electronic memristive devices based on CMOS flash memory technology could lead to large-scale neuromorphic systems.

Improvements in magnetic tunnel junctions allows a 2 MB magnetic random-access memory array to be scaled for L4 cache applications.

With the help of extreme-ultraviolet lithography and high-mobility-channel fin field-effect transistors, the Taiwan Semiconductor Manufacturing Company deliver their latest CMOS platform for use in mobile and high-performance computing applications.

A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

Silicon circuits with increased functionality and device density can be created by directly integrating amorphous oxide semiconductor devices on top of them.

Neural networks could learn new concepts quickly and from only a few examples by using a ferroelectric ternary content-addressable memory as an augmented memory.

Arrays of carbon nanotubes can be used to build radio-frequency transistors with a higher operating frequency and better linearity than silicon technology.

An ultrahigh-impedance superconducting switch could be used to integrate superconducting systems and CMOS control circuitry.

Reservoir computing implemented in memristive hardware can process temporal data with greater energy efficiency than reservoir computers based on CMOS.

A technique known as ptychographic X-ray laminography can image integrated circuits over large volumes and with a resolution of around 10 nm.

By integrating memristor arrays with CMOS circuitry, a computing-in-memory architecture can be created that could provide efficient deep neural network processors.

A large non-adiabatic spin-transfer torque in an antiferromagnetically coupled ferrimagnet can provide fast and efficient control of spin textures — and challenges current understanding of such effects.

Nanoscale vacuum transistors fabricated on silicon carbide wafers could provide radiation-tolerant electronics for application in future spacecraft.

A wearable wireless sensor network for personalized healthcare can be created through the indirect integration of soft on-skin sensors and rigid in-clothes circuits.

Amplifiers based on flexible thin-film electronics can provide healthcare monitoring systems with high signal-to-noise ratios.

In vivo sensors can be interrogated using a wireless system locked to an exceptional point, providing a sensitivity beyond the capabilities of standard wireless readout schemes.

CMOS technology can be used to miniaturize quantum-sensing technology based on nitrogen–vacancy centres in diamond.

Standard silicon CMOS technology can create thermoelectric micro-harvesters that could be used to power numerous IoT devices.

An integrated co-processor chip based on a memristor crossbar array and complementary metal–oxide–semiconductor (CMOS) control circuitry can be used to implement neuromorphic and machine learning algorithms.