Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
An integrated circuit fabricated using industry-standard 40 nm complementary metal–oxide–semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics.
Sulfur vacancies in monolayer molybdenum disulfide can be passivated using an oxygen-incorporated chemical vapour deposition technique, which results in less n-type doping, enhanced photoluminescence and decreased contact resistance compared with growth without oxygen.
Wide-bandgap transistors with room-temperature hole mobility of 680 cm2 V−1 s−1 can be created without surface doping using hydrogen-terminated diamond/hexagonal boron nitride heterostructures.
Inorganic molecular crystal films of antimony trioxide can be fabricated using thermal evaporation deposition and used as a van der Waals dielectric in molybdenum disulfide field-effect transistors.
A vertical transistor and resistive memory can be integrated on a single vertical III–V semiconductor nanowire on silicon, creating a compact cell capable of Boolean logic operations.
Measurements of inkjet-printed thin-film devices made from titanium carbide MXene (metal), molybdenum disulfide (semiconductor) and few-layer graphene (semimetal) clarify the charge transport mechanisms of the devices and highlight the role of inter-flake and intra-flake processes.
Advanced complementary metal–oxide–semiconductor technology and resistive random-access memory can be used to create high-bit-precision compute-in-memory macros for low latency and efficient edge computing.
A molybdenum disulfide/tungsten diselenide van der Waals heterostructure can exhibit a room-temperature valley Hall effect with electrically tunable magnitude and polarity, which can be used to create a bipolar valleytronic transistor.
An on-chip device that is based on a Josephson junction coupled to a fabricated superconducting resonator can provide a source of coherent microwave radiation for potential use in scaled quantum circuits.
By understanding the origins of instability in high-mobility amorphous oxide transistors, ultrastable thin-film transistors with mobilities of 70 cm2 (V s)–1 can be fabricated.
Directional 5G communication channels can be made secure at the physical layer by using a time-modulation approach that enforces the fundamental loss of information through selective spectral aliasing towards the direction of unwanted listeners.
A neural network platform that incorporates photonic components can be used to predict optical fibre nonlinearities and improve the signal quality of submarine fibre communications.
Textile-integrated metamaterials can be used to drive long-distance near-field-communication-based magneto-inductive waves along and between multiple objects, creating a secure and on-demand body area network.
Low-dark-current perovskite photodetectors can be integrated with an oxide transistor backplane to create a high-resolution optical scanning array capable of imaging flat and curved surfaces.
A monolayer of tungsten oxyselenide, created by oxidizing a layer of tungsten diselenide, can be used to efficiently dope graphene, leading to a room-temperature mobility of 2,000 cm2 V–1 s–1 at a hole density of 3 × 1013 cm–2.
Confocal fluorescence microscopy and magnetic resonance can be used to induce and probe charge transport between individual nitrogen-vacancy centres in diamond.
The ferroelectric polarization of epitaxial thin films of germanium telluride can be switched by electrical gating and used to control spin-to-charge conversion.
Electrically induced transitions between hexagonal and monoclinic phases of molybdenum ditelluride can be used to make a second-harmonic-generation modulator with an on/off ratio of 1,000 and a broad bandwidth.
Arrays of memcapacitor devices that work via charge shielding can be used to implement artificial neural networks and could potentially offer an energy efficiency of 29,600 tera-operations per second per watt.