Browse Articles

  • Editorial |

    Ferroelectric field-effect transistors could play a key role in the development of data-centric computing hardware.

  • News & Views |

    A cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.

    • Huihui Zhu
    • , Ao Liu
    •  & Yong-Young Noh
  • Article |

    Nanoscale electrodes fabricated using adhesion lithography can be combined with solution-processed metal oxide semiconductors to create Schottky diodes with performance suitable for 5G communications and beyond.

    • Dimitra G. Georgiadou
    • , James Semple
    • , Abhay A. Sagade
    • , Henrik Forstén
    • , Pekka Rantakari
    • , Yen-Hung Lin
    • , Feras Alkhalil
    • , Akmaral Seitkhan
    • , Kalaivanan Loganathan
    • , Hendrik Faber
    •  & Thomas D. Anthopoulos
  • Article |

    Green perovskite light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness can be created by depositing an ultrathin layer of strongly polar lithium fluoride between the perovskite and hole-transport layers.

    • Baodan Zhao
    • , Yaxiao Lian
    • , Linsong Cui
    • , Giorgio Divitini
    • , Gunnar Kusch
    • , Edoardo Ruggeri
    • , Florian Auras
    • , Weiwei Li
    • , Dexin Yang
    • , Bonan Zhu
    • , Rachel A. Oliver
    • , Judith L. MacManus-Driscoll
    • , Samuel D. Stranks
    • , Dawei Di
    •  & Richard H. Friend
  • Article |

    A magnonic directional coupler with submicrometre dimensions could be used as a building block for integrated magnonic devices, such as half-adders, that have low energy consumption and small footprint.

    • Q. Wang
    • , M. Kewenig
    • , M. Schneider
    • , R. Verba
    • , F. Kohl
    • , B. Heinz
    • , M. Geilen
    • , M. Mohseni
    • , B. Lägel
    • , F. Ciubotaru
    • , C. Adelmann
    • , C. Dubs
    • , S. D. Cotofana
    • , O. V. Dobrovolskiy
    • , T. Brächer
    • , P. Pirro
    •  & A. V. Chumak
  • Perspective |

    This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.

    • Asif Islam Khan
    • , Ali Keshavarzi
    •  & Suman Datta
  • Article |

    A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.

    • Xiao-Jian She
    • , Chen Chen
    • , Giorgio Divitini
    • , Baodan Zhao
    • , Yang Li
    • , Junzhan Wang
    • , Jordi Ferrer Orri
    • , Linsong Cui
    • , Weidong Xu
    • , Jun Peng
    • , Shuo Wang
    • , Aditya Sadhanala
    •  & Henning Sirringhaus
  • News & Views |

    Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.

    • Yangyang Wang
    •  & Lin Xiao
  • News & Views |

    With the help of a gate electrode to control the charge state of individual molecules on graphene, information can be moved along a one-dimensional molecular chain, mimicking the behaviour of an electronic shift register.

    • Roberto Otero
  • Article |

    A nanoplasmonic technique was used to investigate in operando the switching properties of materials used in redox random access memories, providing insight into the operation and potential breakdown mechanisms of the devices.

    • Giuliana Di Martino
    • , Angela Demetriadou
    • , Weiwei Li
    • , Dean Kos
    • , Bonan Zhu
    • , Xuejing Wang
    • , Bart de Nijs
    • , Haiyan Wang
    • , Judith MacManus-Driscoll
    •  & Jeremy J. Baumberg
  • Article |

    One-dimensional molecular arrays on graphene field-effect transistors can be reversibly switched between different periodic charge states by tuning the graphene Fermi level via a back-gate electrode and by manipulating individual molecules, allowing them to function as a nanoscale shift register.

    • Hsin-Zon Tsai
    • , Johannes Lischner
    • , Arash A. Omrani
    • , Franklin Liou
    • , Andrew S. Aikawa
    • , Christoph Karrasch
    • , Sebastian Wickenburg
    • , Alexander Riss
    • , Kyler C. Natividad
    • , Jin Chen
    • , Won-Woo Choi
    • , Kenji Watanabe
    • , Takashi Taniguchi
    • , Chenliang Su
    • , Steven G. Louie
    • , Alex Zettl
    • , Jiong Lu
    •  & Michael F. Crommie
  • Article |

    The superionic phase transition in silver iodide can be used to tailor the carrier type in two-dimensional tungsten diselenide and create programmable transistors, diodes and logic gates, the functions of which can be erased by external triggers such as ultraviolet irradiation.

    • Sung-Joon Lee
    • , Zhaoyang Lin
    • , Jin Huang
    • , Christopher S. Choi
    • , Peng Chen
    • , Yuan Liu
    • , Jian Guo
    • , Chuancheng Jia
    • , Yiliu Wang
    • , Laiyuan Wang
    • , Qingliang Liao
    • , Imran Shakir
    • , Xidong Duan
    • , Bruce Dunn
    • , Yue Zhang
    • , Yu Huang
    •  & Xiangfeng Duan
  • Article |

    Wafer-scale monolayers of MoS2 can be used to create flexible transistors and circuits that exhibit on/off ratios of 1010, current densities of ~35 μA μm−1 and mobilities of ~55 cm2 V−1 s−1.

    • Na Li
    • , Qinqin Wang
    • , Cheng Shen
    • , Zheng Wei
    • , Hua Yu
    • , Jing Zhao
    • , Xiaobo Lu
    • , Guole Wang
    • , Congli He
    • , Li Xie
    • , Jianqi Zhu
    • , Luojun Du
    • , Rong Yang
    • , Dongxia Shi
    •  & Guangyu Zhang
  • Editorial |

    Negative capacitance field-effect transistors have been proposed as a route to low-power electronics, but a lack of fundamental understanding limits progress.

  • Perspective |

    This Perspective examines the relationship between hardware platforms and the competency awareness of a neural network, highlighting how hardware developments can impact uncertainty estimation quality, and exploring the innovations required in order to build competency-aware neural networks in resource constrained hardware platforms.

    • Yukun Ding
    • , Weiwen Jiang
    • , Qiuwen Lou
    • , Jinglan Liu
    • , Jinjun Xiong
    • , Xiaobo Sharon Hu
    • , Xiaowei Xu
    •  & Yiyu Shi
  • Comment |

    Progress towards low-power electronics based on negative capacitance has been slow. For the field to develop, the gap between fundamental research on ferroelectric materials and the engineering of practical devices needs to be bridged.

    • Michael Hoffmann
    • , Stefan Slesazeck
    • , Uwe Schroeder
    •  & Thomas Mikolajick
  • News & Views |

    A monocentric lens and a sensitive hemispherical imager can be combined to create a miniaturized camera that offers a field of view of 120°, deep depth of field and minimal optical aberration.

    • Zhenqiang Ma
  • Editorial |

    Two-dimensional materials could first find widespread commercial application in analogue electronics, rather than as a replacement for silicon in digital devices.

  • Review Article |

    This Review Article examines the potential of spintronics in four key areas of application —memories, sensors, microwave devices, and logic devices — and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.

    • B. Dieny
    • , I. L. Prejbeanu
    • , K. Garello
    • , P. Gambardella
    • , P. Freitas
    • , R. Lehndorff
    • , W. Raberg
    • , U. Ebels
    • , S. O. Demokritov
    • , J. Akerman
    • , A. Deac
    • , P. Pirro
    • , C. Adelmann
    • , A. Anane
    • , A. V. Chumak
    • , A. Hirohata
    • , S. Mangin
    • , Sergio O. Valenzuela
    • , M. Cengiz Onbaşlı
    • , M. d’Aquino
    • , G. Prenat
    • , G. Finocchio
    • , L. Lopez-Diaz
    • , R. Chantrell
    • , O. Chubykalo-Fesenko
    •  & P. Bortolotti
  • Article |

    An operational amplifier that uses the two-dimensional semiconductor molybdenum disulfide as the active material can be used to create complex analogue circuits, including inverters, integrators and amplifiers.

    • Dmitry K. Polyushkin
    • , Stefan Wachter
    • , Lukas Mennel
    • , Matthias Paur
    • , Maksym Paliy
    • , Giuseppe Iannaccone
    • , Gianluca Fiori
    • , Daniel Neumaier
    • , Barbara Canto
    •  & Thomas Mueller
  • Article |

    A two-terminal device that uses an array of carbon nanotubes as the source contact can excite electroluminescence from a variety of materials, producing electroluminescence from long-wave infrared to ultraviolet wavelengths, with onset voltages approaching the optical energy gap of the emitting material.

    • Yingbo Zhao
    • , Vivian Wang
    • , Der-Hsien Lien
    •  & Ali Javey
  • Article |

    Monolayer graphene can be magnetized by coupling to an antiferromagnetic thin film of chromium selenide, resulting in an exchange splitting energy as high as 134 meV at 2 K.

    • Yingying Wu
    • , Gen Yin
    • , Lei Pan
    • , Alexander J. Grutter
    • , Quanjun Pan
    • , Albert Lee
    • , Dustin A. Gilbert
    • , Julie A. Borchers
    • , William Ratcliff II
    • , Ang Li
    • , Xiao-dong Han
    •  & Kang L. Wang
  • News & Views |

    The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

    • Yury Yu. Illarionov
    • , Theresia Knobloch
    •  & Tibor Grasser
  • Article |

    An atomically thin high-κ gate dielectric of Bi2SeO5 can be formed via layer-by-layer oxidization of an underlying two-dimensional semiconductor, allowing high-performance field-effect transistors and inverters to be fabricated.

    • Tianran Li
    • , Teng Tu
    • , Yuanwei Sun
    • , Huixia Fu
    • , Jia Yu
    • , Lei Xing
    • , Ziang Wang
    • , Huimin Wang
    • , Rundong Jia
    • , Jinxiong Wu
    • , Congwei Tan
    • , Yan Liang
    • , Yichi Zhang
    • , Congcong Zhang
    • , Yumin Dai
    • , Chenguang Qiu
    • , Ming Li
    • , Ru Huang
    • , Liying Jiao
    • , Keji Lai
    • , Binghai Yan
    • , Peng Gao
    •  & Hailin Peng
  • Article |

    Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can create p-type dopant nanowires and p–n junctions by using diborane as a p-type dopant precursor.

    • Tomáš Škereň
    • , Sigrun A. Köster
    • , Bastien Douhard
    • , Claudia Fleischmann
    •  & Andreas Fuhrer
  • Editorial |

    Neuromorphic computing might be the answer to AI’s hardware problem.

  • Reverse Engineering |

    Neuromorphic engineering aims to create computing hardware that mimics biological nervous systems, and it is expected to play a key role in the next era of hardware development. Carver Mead recounts how it all began.

    • Carver Mead
  • News Feature |

    Neuromorphic engineering attempts to create brain-like computing hardware and has helped reawaken interest in computer chip start-ups. But is the technology ready for mainstream application?

    • Sunny Bains
  • Review Article |

    This Review Article examines the development of neuro-inspired computing chips and their key benchmarking metrics, providing a co-design tool chain and proposing a roadmap for future large-scale chips.

    • Wenqiang Zhang
    • , Bin Gao
    • , Jianshi Tang
    • , Peng Yao
    • , Shimeng Yu
    • , Meng-Fan Chang
    • , Hoi-Jun Yoo
    • , He Qian
    •  & Huaqiang Wu
  • News & Views |

    Monolayers of boron nitride can be used to build high-performance radio-frequency switches that can operate at the frequencies required for 5G and the communication systems beyond it.

    • Frank Schwierz
  • Article |

    Sweat-activated, biocompatible batteries can be used to power flexible on-skin electronic systems that monitor and wirelessly transmit physiological signals.

    • A. J. Bandodkar
    • , S. P. Lee
    • , I. Huang
    • , W. Li
    • , S. Wang
    • , C.-J. Su
    • , W. J. Jeang
    • , T. Hang
    • , S. Mehta
    • , N. Nyberg
    • , P. Gutruf
    • , J. Choi
    • , J. Koo
    • , J. T. Reeder
    • , R. Tseng
    • , R. Ghaffari
    •  & J. A. Rogers