Colloidal quantum dot photodetectors can be integrated with complementary metal–oxide–semiconductor readout integrated circuits, resulting in low-cost, high-resolution infrared imagers.

By using optoelectronic device arrays for chip-to-chip communication and neuromorphic cores based on memristor crossbar arrays for highly parallel data processing, reconfigurable and stackable hetero-integrated chips can be created for use in edge computing applications.

Lattice distortions induced by ripples in two-dimensional molybdenum disulfide can reduce electron–phonon scattering, leading to improved charge carrier mobility and enhanced transistor performance.

The electro-acoustic effect can be used to electrically control the phase velocity of travelling acoustic waves in a lithium niobate waveguide, and to construct devices that can modulate the phase, frequency and amplitude of acoustic waves, even at the limit of single phonons.

Sparsification techniques can be used to create Ising machines prototyped on field-programmable gate arrays that can quickly and efficiently solve combinatorial optimization problems.

The stability of graphene-based field-effect transistors with amorphous aluminium oxide serving as the top-gate oxide can be improved by tuning the Fermilevel of the two-dimensional channel material such that it maximizes the energy distance between the charge carriers in the channel and the defect bands in the gate oxide.

Methods to create van der Waals contacts between two-dimensional semiconductors and three-dimensional metals are helping to unleash the potential of two-dimensional devices.