Tiers containing graphene-based sensors and molybdenum disulfide-based processors can be vertically stacked using a monolithic integration process, with an interconnect density of 62,500 per mm².

Using an adhesive buffer layer and a high-resolution six-channel inkjet printing system, arrays of stretchable organic electrochemical transistors can be fabricated for application in wearable in-sensor computing platforms.

The perpendicular Néel order in a collinear antiferromagnetic insulator—chromium oxide—can be switched by 180° via the spin–orbit torque with a low current density of 5.8 × 10⁶ A cm⁻² and read out via the anomalous Hall effect.

An acoustic sensor that is based on a network of magnetic nanoparticles suspended in a carrier fluid can be used—together with a machine learning algorithm—to create a wearable voice recognition system with an accuracy of 99% in a noisy environment.

A high-κ dielectric ceramic, magnesium niobate, can be epitaxially grown on a mica substrate and then transferred to form the gate dielectric in molybdenum disulfide transistors, providing van der Waals interfaces and high robustness to temperature and voltage.

A semifloating molybdenum disulfide homojunction exhibits a photoelectric response with a tunable amplitude and relaxation time, which can be used for reconstructive spectroscopy with high resolution and a small device footprint.

Silicon carbide power devices are an important component in a variety of technologies. Tsunenobu Kimoto recounts how the first 1 kV silicon carbide Schottky diodes were created.

Advances in sensors, electrodes and probes are helping to expand the capabilities of brain–computer interfaces.

The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.