Tuning the effective g-factor of semiconductors by a perpendicular electric field is essential for designing controllable spin-based devices such as qubits and spin field-effect transistors. Here, a wide-range g-factor tunability by external electric field is demonstrated in a high-mobility 2D hole heterostructure.

Kagome metals are remarkably interesting due to the strong interplay of topology, magnetism, van-Hove singularities, correlated flat bands, and structural degrees of freedom. Here, the driving mechanism and dynamics of the charge density wave phase in ScV6Sn6 are investigated by experimental and theoretical techniques, revealing a predominant role of phonons in its stabilization.

A superlattice structure in Eu-doped GaN is known to improve the power output of red LEDs, though the mechanism behind this needs to be further established. Here, terahertz emission spectroscopy is used to understand the role played by potential barriers and carrier confinement in determining power output.

The layered charge density wave system 1T-TaS₂ hosts a series of interesting correlation-induced electronic phases, but the nature of its insulating state is still under debate. Here, theoretical calculations and microscopy measurements reveal the role of stacking and interlayer coupling in the formation of different bandgap types, addressing previous discrepancies.

There is an ongoing need for new anticounterfeiting technologies. Here, the combined effects of capillary and Marangoni flow create randomly oriented MoS_x clusters on a surface, which are used as anticounterfeiting tags.

Engineering the dynamics of excitons is a promising approach for advanced optoelectronic devices. Here, exciton formation dynamics at an Si/SiO₂ interface are studied for different temperatures and injection levels by time-resolved terahertz spectroscopy.

Celebrating one year of publishing at Communications Materials

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