A superlattice structure in Eu-doped GaN is known to improve the power output of red LEDs, though the mechanism behind this needs to be further established. Here, terahertz emission spectroscopy is used to understand the role played by potential barriers and carrier confinement in determining power output.

The layered charge density wave system 1T-TaS₂ hosts a series of interesting correlation-induced electronic phases, but the nature of its insulating state is still under debate. Here, theoretical calculations and microscopy measurements reveal the role of stacking and interlayer coupling in the formation of different bandgap types, addressing previous discrepancies.

There is an ongoing need for new anticounterfeiting technologies. Here, the combined effects of capillary and Marangoni flow create randomly oriented MoS_x clusters on a surface, which are used as anticounterfeiting tags.

Engineering the dynamics of excitons is a promising approach for advanced optoelectronic devices. Here, exciton formation dynamics at an Si/SiO₂ interface are studied for different temperatures and injection levels by time-resolved terahertz spectroscopy.

As recently proposed, the kagome metal CsV₃Sb₅ could host spontaneous orbital-currents due to Chern Fermi pockets, but these are challenging to detect. Here, a large g-factor enhancement in magnetic breakdown orbits, determined via quantum oscillations, provides a visible manifestation of Berry-curvature-induced large orbital moments.

Hafnia ferroelectrics hold exciting technological potential, but the variety of phases and unconventional properties found in these materials make them extremely challenging to describe theoretically. Here, an approach based on an original reference phase provides a unifying picture to understand the multiple low-energy polymorphs of hafnia.

Celebrating one year of publishing at Communications Materials

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