Technology breakthroughs at the 2019 IEEE International Electron Devices Meeting.
Highlights from the 2019 IEEE International Electron Devices Meeting
The IEEE International Electron Devices Meeting (IEDM), which takes place in San Francisco in December, is a key forum for reporting developments in semiconductor and electronic device technology. Here Nature Electronics highlights some of the breakthroughs reported at this year’s meeting.
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A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
Improvements in magnetic tunnel junctions allows a 2 MB magnetic random-access memory array to be scaled for L4 cache applications.
With the help of extreme-ultraviolet lithography and high-mobility-channel fin field-effect transistors, the Taiwan Semiconductor Manufacturing Company deliver their latest CMOS platform for use in mobile and high-performance computing applications.