Highlights from the 2019 IEEE International Electron Devices Meeting

Technology breakthroughs at the 2019 IEEE International Electron Devices Meeting.

A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

Improvements in magnetic tunnel junctions allows a 2 MB magnetic random-access memory array to be scaled for L4 cache applications.

With the help of extreme-ultraviolet lithography and high-mobility-channel fin field-effect transistors, the Taiwan Semiconductor Manufacturing Company deliver their latest CMOS platform for use in mobile and high-performance computing applications.