Table 1 Parameters of the samples and the PL lifetime for main PL bands in GaN.

From: Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Sample number Thickness (μm)   τ (μs)
n (1016 cm−3) UVL BL1 YL1 RL1 GL1
100 K 180 K 250 K 100 K 180 K 180 K 180 K 250 K
3 7 2.2 5 6.4 15   250 600 6.1
101 9.4 2.7 5.4 6.5 30     13
102 11 2 3.8 4.6 26 9    10
104 10.6 2 4.6 6 11 20 175 400 4.5
106 14.3 0.8 2.5 3.5 26 9    6
201 15.3 3 14 18 8 23 120 290 3
202 20.4 2.4 4.8 6.1 10   180 450 4.3
203 21 3.4 7.4 9.4 7 18 100   
1007 22 2.2 3.6 4.3 19 55 320 950 9
2057 24 2 4.5 5.4 9.5   155 360 4
RS280 27 1.6a 13a 29a 100 390    49
1601 9 240 240 240 0.16 0.8    
cvd3533 1.5 700 700 700 0.04   0.1   
cvd3540 1.5 20 30 41 1   30   
T1011 6 2.5 9.5 14 17 46   700  
T2015 5 6.1 15 21 7 16   250  
B73 200 0.83 1.3 1.4 63 220    30
  1. aThe two-layer model resulted in an unreasonable temperature dependence of n in sample RS280.