Figure 7 | Scientific Reports

Figure 7

From: Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Figure 7

Temperature dependence of PL lifetime for PL bands in a degenerate Si-doped GaN.

The solid lines are calculated using Eq. (5) with the following parameters: EA = 170 meV for the UVL band and EA = 320 meV for the BL1 band; CpA = 10−6 cm3/s for the UVL band and CpA = 7 × 10−7 cm3/s for the BL1 band; τ0 = 0.16 and 0.8 μs for the UVL and BL1 bands, respectively. Sample 1601.

Back to article page