Figure 4 | Scientific Reports

Figure 4

From: Materials characterisation by angle-resolved scanning transmission electron microscopy

Figure 4

ARSTEM series of the GexSi1−x MOSFET.

The displayed set of STEM images (selection) was taken at camera lengths of (a) 478 and (b) 195 mm with different radii of the iris aperture as indicated at the bottom of each image. Source S, drain D and gate G are marked in image 1 in (a). The inner acceptance angle is (a) 16 and (b) 35 mrad. The colour-coded signal of each image was normalised to the intensity I0 of the incoming beam with limits given at the top of the images.

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