Figure 5 | Scientific Reports

Figure 5

From: Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Figure 5

Proof of concept measurement.

This example is for p = 21 (2·3 + 1 · 1 = 7) and q = 22 (2·3 + 2 · 1 = 8). (a) The sequence of resistive states in ReRAM device z2, (b) ReRAM device z1 and (c) ReRAM device z0. The final values are: z2 = R1, z1 = R2 and z0 = R0. This corresponds to 1·9 + 2 · 3 + 0·1 = 15. Numbers and arrows indicate the state changes. In between SET-steps are not shown. Full data for this example can be found in supplementary S4–S6.

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