Figure 1 | Scientific Reports

Figure 1

From: Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Figure 1

Resistive switching device structures.

(a) Scanning electron microscopy image of 1 × 3 array with the inset showing 5 × 5 μm2 single device (b) Transmission electron microscopy image of single device cross-section, 7-nm-thick TaOx switching layer and 13-nm-thick tungsten ohmic electrode. (c) Typical bipolar operation of SET-RESET switching in DC sweep mode for a single ReRAM (5 × 5 μm2) device within the 1 × 3 array.

Back to article page