Laser-induced Sb2S3 RLS crystal line on the surface of Sb2S3 glass.
The laser-induced dot was created by slowly ramping the power density from 0 to 60 μW/μm2 in 5 s and maintaining it for 60 s. The subsequent exposure transformed the surface of Sb2S3 glass to a crystal line by moving the laser spot with scanning speed 1 μm/s. Scale bar corresponds to 5 μm. SEM image (a) and colored orientation IPF maps with reference vector in the direction of surface normal TD (b), ND (c) and RD (d) and pole figure for <001>, <100> and <010> directions of Sb2S3 (f) for the crystal (dot and line). Unit cells with varying orientation of the lattice are shown on IPF ND map (c), while the crystal orientation deviation (COD) map (g) relative to lattice orientation in the dot indicates rotation of Sb2S3 crystal. The plot (h) shows quantitative changes of the lattice orientation with distance from top point of the seed as well as initial and final orientation of the unit cell. The crystal lattice rotates clockwise in the line as the laser beam is moved from left to right. Arrows on IPF ND map (c) describe this rotation.