This Article has been retracted by the authors. The data presented in Figures 1e, 1g, 1h, 2b-d, 4a-b, 4d-e, 6a-b and 7a-b were manipulated and are duplicated in other papers1,2,3,4,5.
All authors acknowledge these issues and agree to the retraction of the Article.
References
Park, J.-H. & Joo, S.-K. Quasi-Single-Grain Pb(Zr,Ti)O3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device. IEEE Transactions on Device and Materials Reliability 15, 417–422, doi: 10.1109/TDMR.2015.2455506 (2015).
Park, J.-H. & Joo, S.-K. A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue. IEEE Electron Device Letters 36, 1033–1036, doi: 10.1109/LED.2015.2472987 (2015).
Park, J.-H. et al. Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3 for very-large-scale-integrated memory. 49, 075106, doi: 10.1088/0022-3727/49/7/075106 (2016).
Park, J.-H. & Joo, S.-K. Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance. Appl. Phys. Lett. 108, 103504, doi: 10.1063/1.4943786 (2016).
Park, J.-H. et al. Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3 . J. Appl. Phys. 119, 124108, doi: 10.1063/1.4945002 (2016).
Additional information
The online version of the original article can be found at 10.1038/srep23189
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Park, J., Kim, H., Jang, G. et al. Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor. Sci Rep 6, 31300 (2016). https://doi.org/10.1038/srep31300
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DOI: https://doi.org/10.1038/srep31300
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