Phototransistor performances under VIS and NIR lights.
(a) Output (top; VG = −80 V) and transfer (bottom; VD = −80 V) characteristics (selected) for OPTRs with the P3HT:PEHTPPD-BT layers according to the incident light density (power density, PIN) under illumination with VIS (550 nm) and NIR (900 and 1000 nm) lights. (b) Corrected responsivity (RC) as a function of drain voltage (VD) at three different gate voltages under illumination with VIS and NIR lights. (c) Comparison between apparent responsivity (RA) and RC under illumination with VIS (top) and NIR (bottom) lights. Note that RA and RC values were taken from the transfer curves in (a) and Figures S7–S8 at similar range of PIN (1.4 ~ 2.2 μW/cm2).