Figure 6 | Scientific Reports

Figure 6

From: Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Figure 6

(a) Diagram of sandwich 3C-SiC/Si/3C-SiC structure after depositing ~750 nm (not to scale) SiC film on the on-axis Si substrate, the Si wafer’s single polished surface facing the pumping end, it has a slightly thicker (~50 nm more) SiC layer deposited at the backside, (b) Diagram of sandwich 3C-SiC/Si/3C-SiC structure after depositing ~750 nm (not to scale) SiC film on the off-axis Si substrate, the Si wafer’s single polished surface facing the incoming gases, it has a slightly thicker SiC layer deposited on the front side, (c) Wafer bow profile for bare Si substrates, as-deposited SiC/Si/SiC structures and SiC/Si wafers after removing the SiC deposited on unpolished Si side.

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