Figure 4 | Scientific Reports

Figure 4

From: Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Figure 4

Illustrations of different growth mechanisms for SiC films grown at 1200 °C.

On-axis Si, (a) surface adatoms diffuse on the surface and form new nucleation centres, leading to wedding-cake type 3D islands as shown in (b) after 18 adatoms are incorporated into the Si substrate. For off-axis Si, (c) surface adatoms have sufficient energy to diffuse to a step edge, which lead to a constant surface roughness as shown in (d) after 18 adatoms are incorporated into the Si substrate.

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