Figure 1 | Scientific Reports

Figure 1

From: Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Figure 1

The log-log scale plots of the dependence of RMS roughness on SiC thickness.

SiC deposition was performed on both on-axis and 4° off-axis Si(111) substrates at 1000 °C (a) and at 1200 °C (b). Scaling exponent has been determined using linear regression. Zero value for the kinetic scaling exponent was found for SiC ranging from ~300 nm to ~1100 nm grown on off-axis Si at 1200 °C. Before the 1200 °C deposition, ~100 nm SiC was initially grown at 1000 °C to inhibit the formation of Si voids at the 3C-SiC/Si interfaces. The ~100 nm SiC/Si has a roughness of ~3.61 nm and ~3.81 nm for on-axis and off-axis SiC/Si, respectively, before the growth commenced at 1200 °C.

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