Figure 6 | Scientific Reports

Figure 6

From: Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Figure 6

PL spectra and intensities of the InGaN/GaN LEDs.

(a) Room-temperature PL spectra of LEDs on the ALD compliant BL and MOCVD NL. (b) Arrhenius plot of the normalized integrated PL intensity of the LEDs on the ALD compliant BL and MOCVD NL. The PL measurement was carried out at temperatures from 20 to 300 K. The dashed lines are the fitting curves described by the empirical Arrhenius equation defined in the Supplementary Information.

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