Figure 3 | Scientific Reports

Figure 3

From: Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Figure 3

HRTEM images.

(a,e) HRTEM images of the PDA-treated ALD compliant BL and sapphire substrate without the overlying GaN epilayer (a) and with the overlying GaN epilayer (e) grown by MOCVD. (bd) FFT diffractograms of the areas enclosed in the upper and the bottom regions of the ALD compliant BL and the sapphire in (a), respectively. (f,j) HRTEM images of the PDA-treated MOCVD NL and sapphire substrate without the overlying GaN epilayer (f) and with the overlying GaN epilayer (j) grown by MOCVD. A TD is indicated in (j), which was taken by a condition so as to excite exclusively the 0002 reflections and off any hki0 reflections of GaN. (gi) FFT diffractograms of the areas enclosed in the upper and the bottom regions of the MOCVD NL and the sapphire in (f), respectively. (k,l) show schematic diagrams of the ALD compliant BL and MOCVD NL, respectively.

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