Figure 3

From: Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Figure 3

(a) The Isd-Vsd characteristics of the graphene/ZnO NW Schottky diode under different gate voltages (−80 ~ 80 V). (b) Variation of the Schottky barrier height of the graphene/ZnO NW junction as a function of gate voltage.