Corrigendum | Published:

CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Scientific Reports volume 4, Article number: 6897 (2014) | Download Citation

The Acknowledgements section in this Article was omitted. The Acknowledgements should read:

“This work was supported by a Korea University Grant.”

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https://doi.org/10.1038/srep06897

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