Figure 6 | Scientific Reports

Figure 6

From: Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires

Figure 6

(a) Valence band spectra of Ge NWs as a function of wire length and i/n-Ge wafers measured by XPS.(b) Schematic diagram of band structure indicating the valence band offset (ΔEv), which was extracted from the valence band of (a). (c) Modeling of a gradient of EF depending on distributional characteristics, which are applied in an n-type Ge NWs from 1.3 to 5.5 μm. (d) Calculated values of the built-in electric field (Eb) formed in the Ge NWs as a function of wire length.

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