An intercalation strategy has been developed to produce bulk-monolayer MoS2 which retains single-layer semiconductor properties.
This is a preview of subscription content, access via your institution
Subscribe to this journal
Receive 12 digital issues and online access to articles
$119.00 per year
only $9.92 per issue
Rent or buy this article
Prices vary by article type
Prices may be subject to local taxes which are calculated during checkout
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Phys. Rev. Lett. 105, 136805 (2010).
Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Nat. Nanotechnol. 7, 490–493 (2012).
Wu, W. et al. Nature 514, 470–474 (2014).
Drüppel, M., Deilmann, T., Krüger, P. & Rohlfing, M. Nat. Commun. 8, 2117 (2017).
Wu, Y., Li, D., Wu, C. L., Hwang, H. Y. & Cui, Y. Nat. Rev. Mater. 8, 41–53 (2023).
Wang, C. et al. Nature 555, 231–236 (2018).
He, Q. et al. Nano Lett. 19, 6819–6826 (2019).
Zhou, B. et al. Nat. Synth. https://doi.org/10.1038/s44160-023-00396-2 (2023).
The authors declare no competing interests.
About this article
Cite this article
Zhang, K., Luo, Z. Seeing single-layer semiconductor properties in bulk. Nat. Synth (2023). https://doi.org/10.1038/s44160-023-00388-2