Table 1 Characterization results obtained for the epitaxially grown samples.

From: Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

Sample Sn % GeSn layer thickness t (nm) In-plane strain \(\epsilon ^{||}\)
N1 4.82 420 −0.60%
N2 5.76 360 −0.74%