Fig. 4: Franz–Keldysh effect in GeSn. | Communications Materials

Fig. 4: Franz–Keldysh effect in GeSn.

From: Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

Fig. 4

a Change in the absorption coefficient in the GeSn active layers at different electric fields for devices N1 (upper panel) and N2 (lower panel). The inset shows the change in the absorption coefficient for device N1 and device N2 at λ = 1940 and λ = 2060 nm, respectively, as a function of electric field. b Figure-of-merit (FOM) Δα/α0 for the GeSn active layer at different electric fields for devices N1 (upper panel) and N2 (lower panel). The lowest direct bandgap is indicated by the dashed blue lines. The inset shows the absorption coefficient spectrum under the zero-bias condition of device N2.

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