Fig. 1: Material characterization of the grown samples. | Communications Materials

Fig. 1: Material characterization of the grown samples.

From: Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

Fig. 1

a Cross-sectional transmission electron microscopic (XTEM) image of sample N1 overlapped with secondary ion mass spectrometry (SIMS) atomic distribution. Inset: a high-resolution XTEM image of the Ge/GeSn interface, revealing pseudomorphic growth. b (224) reciprocal space mapping (RSM) of sample N1, showing pseudomorphic GeSn/Ge heterostructures. c ω–2θ scans of samples N1 (red line) and N2 (blue line), showing shifted GeSn peaks with increasing Sn composition.

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