Fig. 4 | Communications Physics

Fig. 4

From: Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots

Fig. 4

Proximity induced gap as a function of gate voltage. a Proximity gap Δ* as a function of the backgate voltage VBG. The inset shows a schematic of the device with the relevant parameters: superconducting gap Δ in the bulk superconductor S, induced gap \(\widetilde \Delta\) below the superconductor inside the nanowire (gray), and the induced gap Δ* in the nanowire lead segment (LS). The quantum dot (QD) is located L = 350 nm from S. Background colors indicate the short junction limit (green) and the long junction limit (blue), depending on the relation of the the critical length Lc compared with the length of the junction L. Bars indicate the uncertainty of the extracted values of Δ*. b Calculated local density of states (LDOS) as a function of energy for different gate voltages VBG at a fixed distance from the interface, L = 350 nm

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