Abstract
Ta3N5 is a promising photoanode material with a theoretical maximum solar conversion efficiency of 15.9% for photoelectrochemical water splitting. However, the highest applied bias photon-to-current efficiency achieved so far is only 2.72%. To bridge the efficiency gap, effective carrier management strategies for Ta3N5 photoanodes should be developed. Here, we propose to use gradient Mg doping for band structure engineering and defect control of Ta3N5. The gradient Mg doping profile in Ta3N5 induces a gradient of the band edge energetics, which greatly enhances the charge separation efficiency. Furthermore, defect-related recombination is significantly suppressed due to the passivation effect of Mg dopants on deep-level defects and, more importantly, the matching of the gradient Mg doping profile with the distribution of defects within Ta3N5. As a result, a photoanode based on the gradient Mg-doped Ta3N5 delivers a low onset potential of 0.4 V versus that of a reversible hydrogen electrode and a high applied bias photon-to-current efficiency of 3.25 ± 0.05%.
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The data that support the findings of this study are available from the corresponding author on request. Source data are provided with this paper.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (no. 21872019) and Sichuan Science and Technology Foundation (no. 2018JY0137). I.D.S. acknowledges funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy—EXC 2089/1 —90776260. M.N., N.S. and K.D. acknowledge the Artificial Photosynthesis Project (ARPChem) of the New Energy and Industrial Technology Development Organization (NEDO) and ‘Nanotechnology Platform’ of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
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Y.L. and Y.X. proposed the project and designed the experiments. Y.L., K.D. and I.D.S. supervised the project. Y.X. carried out the materials synthesis, PL characterizations, device fabrication, PEC tests and gas chromatography measurements with assistance from C.F. and J.F.; F.W., C.L., V.F.K. and C.-M.J. carried out the SEM, XPS and PDS measurements. M.N. and N.S. carried out the STEM, HRTEM and EDS measurements. Y.L., I.D.S., KD. and Y.X. analysed the data and wrote the manuscript. All authors discussed, commented on and revised the manuscript.
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X-ray diffraction, PL and XPS source data.
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J–V curve, Mott–Schottky plot, Tauc plot and UPS source data.
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PL, PDS and TRPL source data.
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J–V curve, J–time curve, ABPE curve, IPCE and gas chromatography source data.
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Xiao, Y., Feng, C., Fu, J. et al. Band structure engineering and defect control of Ta3N5 for efficient photoelectrochemical water oxidation. Nat Catal 3, 932–940 (2020). https://doi.org/10.1038/s41929-020-00522-9
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DOI: https://doi.org/10.1038/s41929-020-00522-9
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