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Thin-film transistors

A complementary step to halide perovskite electronics

Nature Electronics volume 7, pages 430–431 (2024)Cite this article

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Stabilization of the cubic phase of formamidinium lead triiodide perovskite, together with passivation of undercoordinated lead atoms, can be used to create high-mobility n-type thin-film transistors, which could be combined with existing p-type devices to build complementary circuits.

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Fig. 1: p-type and n-type perovskite transistors.

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Authors and Affiliations

  1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR

    Yen-Hung Lin

  2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR

    Yen-Hung Lin

  3. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK

    Yen-Hung Lin

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  1. Yen-Hung Lin
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Correspondence to Yen-Hung Lin.

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Lin, YH. A complementary step to halide perovskite electronics. Nat Electron 7, 430–431 (2024). https://doi.org/10.1038/s41928-024-01178-0

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