The development of spintronic devices based on spin–orbit torque requires the electrical-current-driven field-free switching of magnetization in materials with perpendicular magnetic anisotropy. However, approaches to achieve such switching typically require additional magnetic layers or structural engineering, which complicates fabrication processes and impedes the scalability and stability of devices. Here we report the field-free switching of the perpendicular magnetic anisotropy ferromagnet cobalt iron boron at room temperature using out-of-plane spin-polarized current generated by the Weyl semimetal tantalum iridium telluride (TaIrTe4). Bilinear magnetoelectric resistance and spin-torque ferromagnetic resonance measurements confirm the out-of-plane polarized spins, and the out-of-plane spin canting angle is estimated to be around 8°. The spin Hall conductivity of TaIrTe4 is estimated to be 5.44 × 104 × ћ/2e (Ω m)−1, which is almost one order of magnitude larger than that of tungsten ditelluride. Our results indicate that TaIrTe4 is an efficient spin current source for field-free spin–orbit torque applications.
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The data that support the plots within this paper and other findings of this study are available from the corresponding author upon reasonable request.
The codes that support this study are available from the corresponding author upon reasonable request.
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This work was supported by SpOT-LITE program (A*STAR grant, A18A6b0057) through RIE2020 funds; Samsung Electronics (IO221024-03172-01); National Natural Science Foundation of China (nos. 22175203 and 22006023); Natural Science Foundation of Guangdong Province (nos. 2022B1515020065 and 2019A1515010428); and Plan Fostering Project of the State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University (no. OEMT-2021-PZ-02). We would like to acknowledge that the simulation work involved in this research is partially supported by NUS Information Technology’s High Performance Computing.
The authors declare no competing interests.
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Liu, Y., Shi, G., Kumar, D. et al. Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4. Nat Electron 6, 732–738 (2023). https://doi.org/10.1038/s41928-023-01039-2