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Power electronics

All-around diamond for cooling power devices

Nature Electronics volume 5, pages 834–835 (2022)Cite this article

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High-electron-mobility transistors with a diamond coating on their top and side surfaces can effectively dissipate heat in high-power electronics applications.

The increasing demands of applications such as high-performance computing, power-management devices and wireless communications create substantial challenges for both the development of new semiconductor devices and their thermal management. The self-heating of devices degrades the performance and reliability of components by introducing multiple thermally activated degradation mechanisms1. To limit this, localized heat generated in the active region of the device — the channel in a transistor, for example — must be efficiently removed.

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Fig. 1: Schematic of the AlGaN/GaN HEMT with all-around diamond integration.

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Authors and Affiliations

  1. Department of Mechanical Engineering, University of Houston, Houston, TX, USA

    Jae-Hyun Ryou

  2. Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA

    Jae-Hyun Ryou

  3. Materials Science and Engineering Program, Texas Center for Superconductivity at UH, University of Houston, Houston, TX, USA

    Jae-Hyun Ryou

  4. Advanced Manufacturing Institute, University of Houston, Houston, TX, USA

    Jae-Hyun Ryou

  5. Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA

    Sukwon Choi

Authors
  1. Jae-Hyun Ryou
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  2. Sukwon Choi
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Correspondence to Jae-Hyun Ryou or Sukwon Choi.

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The authors declare no competing interests.

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Ryou, JH., Choi, S. All-around diamond for cooling power devices. Nat Electron 5, 834–835 (2022). https://doi.org/10.1038/s41928-022-00896-7

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  • DOI: https://doi.org/10.1038/s41928-022-00896-7

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