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Memory

MRAM makes its mark

Nature Electronics volume 5, pages 832–833 (2022)Cite this article

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A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.

Society is currently experiencing an information explosion. More than 300 billion e-mails are, for instance, expected to be sent every day in 20221, and a car will create an estimated one terabyte (1 × 1012 bytes) of data during an hour of operation2. This all adds up to around two exabytes (2 × 1018 bytes) of data every single day3. However, only around 5% of these data are thought to be used4. To make much better use of the data, various computational challenges will need to be addressed, including lowering the power consumption of data storage and management. Reporting at the 2022 IEEE International Electron Devices Meeting in San Francisco, T. Y. Lee and colleagues at Samsung Electronics now demonstrate an energy-efficient magnetoresistive random-access memory (MRAM) technology5.

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Fig. 1: Advances in memory technology.

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  1. School of Physics, Engineering and Technology, University of York, York, UK

    Atsufumi Hirohata

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  1. Atsufumi Hirohata
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Correspondence to Atsufumi Hirohata.

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Hirohata, A. MRAM makes its mark. Nat Electron 5, 832–833 (2022). https://doi.org/10.1038/s41928-022-00893-w

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