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COMPUTING-IN-MEMORY

Resistive memories stack up

Three-dimensional computing systems made of vertically integrated complementary metal–oxide–semiconductor circuits and layered resistive memory can perform analogue computing-in-memory with high energy efficiency.

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Fig. 1: A 3D computing-in-memory system with eight layers of vertical RRAM and 55 nm CMOS peripheral circuits.

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Correspondence to Jae-sun Seo.

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Yeo, I., Seo, Js. Resistive memories stack up. Nat Electron 5, 414–415 (2022). https://doi.org/10.1038/s41928-022-00804-z

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