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TWO-DIMENSIONAL DEVICES

Integrating 2D materials and metal electrodes

Nature Electronics volume 5, pages 259–260 (2022)Cite this article

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Graphene can be used as a donor substrate to create van der Waals contacts between two-dimensional semiconductors and a variety of three-dimensional metal electrodes, including strongly adhering metals.

As silicon devices begin to enter sub-5-nm technology nodes, the semiconductor industry faces substantial difficulties sustaining the dimensional scaling of electronic devices1. Transistors based on two-dimensional (2D) van der Waals semiconductors are one potential solution2. However, it remains challenging to create the necessary electrical contacts for 2D semiconductors because in the 2D limit — where the semiconductor thickness is smaller than the depletion and transfer lengths3 — the properties of the metal–semiconductor junction govern every aspect of device performance.

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Fig. 1: Wafer-scale transfer of metal patterns using graphene-assisted transfer printing.

References

  1. Iannaccone, G., Bonaccorso, F., Colombo, L. & Fiori, G. Nat. Nanotech. 13, 183–191 (2018).

    Article  Google Scholar 

  2. Akinwante, D. et al. Nature 573, 507–518 (2019).

    Article  Google Scholar 

  3. Allain, A., Kang, J., Banerjee, K. & Kis, A. Nat. Mater. 14, 1195–1205 (2015).

    Article  Google Scholar 

  4. Liu, Y. et al. Nature 557, 696–700 (2018).

    Article  Google Scholar 

  5. Liu, G. et al. Nat. Electron. https://doi.org/10.1038/s41928-022-00764-4 (2022).

    Article  Google Scholar 

  6. Wu, P. et al. Nat. Electron. 4, 45–53 (2021).

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea

    Soon-Yong Kwon

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  1. Soon-Yong Kwon
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Correspondence to Soon-Yong Kwon.

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Kwon, SY. Integrating 2D materials and metal electrodes. Nat Electron 5, 259–260 (2022). https://doi.org/10.1038/s41928-022-00770-6

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  • DOI: https://doi.org/10.1038/s41928-022-00770-6

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