Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

TWO-DIMENSIONAL DEVICES

Integrating 2D materials and metal electrodes

Nature Electronics volume 5, pages 259–260 (2022)Cite this article

Subjects

Graphene can be used as a donor substrate to create van der Waals contacts between two-dimensional semiconductors and a variety of three-dimensional metal electrodes, including strongly adhering metals.

As silicon devices begin to enter sub-5-nm technology nodes, the semiconductor industry faces substantial difficulties sustaining the dimensional scaling of electronic devices1. Transistors based on two-dimensional (2D) van der Waals semiconductors are one potential solution2. However, it remains challenging to create the necessary electrical contacts for 2D semiconductors because in the 2D limit — where the semiconductor thickness is smaller than the depletion and transfer lengths3 — the properties of the metal–semiconductor junction govern every aspect of device performance.

This is a preview of subscription content, access via your institution

Access options

Buy article

Get time limited or full article access on ReadCube.

$32.00

Buy

All prices are NET prices.

Fig. 1: Wafer-scale transfer of metal patterns using graphene-assisted transfer printing.

References

  1. Iannaccone, G., Bonaccorso, F., Colombo, L. & Fiori, G. Nat. Nanotech. 13, 183–191 (2018).

    Article  Google Scholar 

  2. Akinwante, D. et al. Nature 573, 507–518 (2019).

    Article  Google Scholar 

  3. Allain, A., Kang, J., Banerjee, K. & Kis, A. Nat. Mater. 14, 1195–1205 (2015).

    Article  Google Scholar 

  4. Liu, Y. et al. Nature 557, 696–700 (2018).

    Article  Google Scholar 

  5. Liu, G. et al. Nat. Electron. https://doi.org/10.1038/s41928-022-00764-4 (2022).

    Article  Google Scholar 

  6. Wu, P. et al. Nat. Electron. 4, 45–53 (2021).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea

    Soon-Yong Kwon

Authors
  1. Soon-Yong Kwon
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Soon-Yong Kwon.

Ethics declarations

Competing interests

The author declares no competing interests.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Kwon, SY. Integrating 2D materials and metal electrodes. Nat Electron 5, 259–260 (2022). https://doi.org/10.1038/s41928-022-00770-6

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/s41928-022-00770-6

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing